Advanced SOI CMOS technology for RF applications

Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors fit the needs for low-voltage low-power RF applications. To demonstrate the capabilities of this technology we present a single stage OTA with a f/sub T/ of 1.1 GHz and /spl phi//sub M/ of 30/spl deg/, and two CMOS mixers with exceptional linearity results.