SIMMWIC: the impact of SiGe

This paper discusses the performance of Silicon Millimeter Wave Integrated Circuits and possible improvements by SiGe heterostructure device concepts. It is shown, that Schottky and transit time diodes in homojunction silicon already exhibit a good performance. An improvement by SiGe is not yet proven for these devices. Silicon based transistors for 20 to 40 GHz operation frequencies require heterojunction concepts (SiGe HBT) as well as novel concepts for even faster devices.