TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs

Enhanced back-channel leakage in a mesa SOI device architecture is analyzed. Using integrated process, device, and hole trapping simulation, the cause of the leakage enhancement is identified as enhanced hole trapping in the buried oxide near the island edge. Simulation results suggest this edge effect may be mitigated using body-tied-to-source tabs at the edge of the island. The potential performance and manufacturing impacts of this measure are discussed.