Megaelectronvolt phosphorus implantation for bipolar devices

The use of megaelectronvolt phosphorus implantation in the formation of the buried layer of bipolar transistors was investigated. The main focus was on the reduction of the secondary defect density. The lowest defect density is obtained with annealing by rapid thermal processing (1150 degrees C/60 s). Results on electrical characteristics of bipolar transistors with megaelectronvolt-implanted buried layers are presented and compared with those of conventional devices.<
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