The effect of varying barrier height on the operational characteristics of 1.3-/spl mu/m strained-layer MQW lasers

This paper presents an empirical study of the effects that barrier layer composition has on the operational characteristics of 1.3-/spl mu/m-wavelength InGaAsP-InP multiquantum-well (MQW) strained-layer ridge-waveguide lasers. A systematic empirical investigation of how this design choice affects practical device operation was undertaken by examining threshold current, efficiency, and modal gain as a function of temperature in five different laser structures. The results of these studies indicate that small barrier heights improve device performance, despite the loss of electronic confinement in the shallow conduction band quantum wells. Indeed, it appears that carrier uniformity in the MQW structure may be improved by carrier redistribution due to thermal or tunneling effects, which in turn enhances the operation of the low barrier height structures.