Time domain measurements of charge pumping current

Reliable methods for analysing interface traps are essential not only for the scaling of MOSFETs but also for realizing emerging devices (Beyond CMOS and More-than Moore). One of the methods for evaluating the interface state density N
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is the charge pumping (CP). It was first proposed by Brugler and Jespers [1] in 1969, and its model was established by Groeseneken in 1984 [2]. Since then, vast amount of reports have been issued on this method. However, there still remain open questions on the validity of the model; e.g., the CP process may not simply follow the theory based on Shockley-Read-Hall model [3].