Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

This paper reports on the development of a thermo-electrical non-linear model for sub-100 nm gate length AlGaN/GaN High-Electron-Mobility Transistors (HEMT) grown on silicon (111) substrate by Molecular Beam Epitaxy (MBE). The presented model benefits from the innovative implementations of a sub-network taking into account access resistances frequency dispersion and a double intrinsic current source well suited for DC/RF dispersion losses. A comparison between simulation and experimental results under large-signal operating conditions at both 40 GHz and 94 GHz demonstrates the functionality of the implemented model.