GaAs multichip packaging using the selectively oxidized porous silicon (SOPS) substrate

The selectively oxidized porous silicon (SOPS) substrate consists of a silicon region for GaAs multichip packaging and an oxidized porous silicon (OPS) region for integration of passive elements such as inductors, MIM capacitors, resistors and coplanar waveguides. This structure provides many advantages at microwave frequencies, such as neglect of the semiconducting nature of silicon, low signal attenuation, high thermal conductivity, etc. Using the SOPS substrate and GaAs MMICs, L-band multichip packaging is implemented for two GaAs broadband amplifier, interconnection and transmitter systems.