mLogic: All spin logic device and circuits

Emerging electronic devices utilizing spin based effects and phenomena, such as spin transfer torque magnetic random access memory (STT-MRAM), have gathered a great spectrum of effort, ranging from basic scientific research to technology development [1][2][3][4]. In this talk, we present a novel all spin logic circuits, referred to as mLogic, based on a four terminal device, referred to as mCell, that utilizes Spin Hall Effect (SHE) along with Dzyaloshinskii-Moriya-Interaction (DMI) at metallic interfaces for its operation [5].