Comparative simulation study on MoS2 FET and CMOS transistor

MoS₂ FET and SOI/FinFET are simulated and compared to experimental results and the impact of gate scaling-down on the transistor performance is studied. Though MoS2 FET shows better suppression of the short channel effect, its on-current is still lower than that of sSOI/FinFET down to 10nm physical channel length due to the low saturation velocity of MoS2. In addition, the improvement of mobility over 60cm²/Vs has little benefit for the on-current.