Nanoscale-RingFET: An Analytical Drain Current Model Including SCEs

In this paper, using a 2-D Poisson equation (in cylindrical coordinates), an analytical drain current model of a nanoscale RingFET architecture has been developed for the first time. Major short-channel effects, such as channel length modulation, velocity scattering, and drain-induced barrier lowering, are taken under consideration while developing the model. A bandgap narrowing model has been employed to investigate the impact of higher channel doping. The modeled results of the surface potential, electric field, threshold voltage (V
_th
), subthreshold slope, and drain current have been verified by comparing with those of the ATLAS 3-D device simulation. The influence of the drain radius and position of the source/drain regions on the electrical characteristics of the device has also been demonstrated.