Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs

We present in this paper high quality thin NiSi contacts on Si for the 16nm node using pre-silicidation CF
₄
Plasma Immersion Ion Implantation (PIII) The thermal stability, the layer uniformity and the interface roughness of thin NiSi layers are improved by CF
₄
PIII, which is assumed to be caused by segregation of C, F atoms at the grain boundaries and at the NiSi/Si interface. The Schottky barrier height of NiSi/p-Si is also lowered by CF
₄
plasma, thus a lower contact resistance on p+ doped Si is expected.