Temporal localized states in semiconductors (II): from mode-locking to localized pulses

In this presentation we will review the results recently obtained on Time-Localized Structures (TLS) in VCSELs coupled to an external cavity. We show that, when the cavity roundtrip is much larger than the medium timescales, this system exhibits a temporal aspect-ratio large enough to host TLS. Two configurations will be considered. In the first one the system is submitted to cross-polarization reinjection which leads to the formation of vectorial TLS. In the second one the external mirror is a Saturable Absorber Mirror, a scheme commonly used for achieving active mode-locking. Here we will show how modelocking pulses become TLS and how they can be manipulated by a current modulation.