A study of boron doping profile control for a low V/sub t/ device used in the advanced low power, high speed mixed-signal IC

The effects of through-gate oxide implantation on gate oxide integrity (GOI) and defect density have been investigated. It is observed that through-gate implants can reduce the off-state leakage current by 1 to 2 orders, giving the same V/sub t/ value, and can maintain much tighter V/sub t/ spread control without sacrificing the GOI and yield performance. These attractive advantages make the through-gate oxide implant process a promising candidate for high speed, low power applications.