Investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy

We show that the technique of Frequency Resolved Admittance Spectroscopy (FRAS) allows the identification of deep traps with reduced measurement effort compared to Deep Level Transient Spectroscopy (DLTS). This is shown by the analysis of radiation defects introduced in n-type 4H-SiC 1700V Schottky diodes.