SiC MESFET with output power of 50 watts CW at S-band

A SiC MESFET with 42 mm gate periphery on a single die had a maximum RF output power of 53 W CW with 37% power-added efficiency (PAE) at 3.0 GHz. This unprecedented power from a die with an area of only 3 mm/sup 2/ demonstrates the extremely high power handling capability of SiC microwave devices. Additionally, we report here SiC MESFETs showing 2.5 W/mm performance with 41% PAE at 8 GHz, demonstrating the utility of this technology at X-band.