Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers

Well-thickness dependence of temperature characteristics of 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers was investigated. Higher characteristic temperatures of threshold current density were obtained for thicker wells up to 6 nm. Fabricated ridge-waveguide lasers with 6-nm-thick wells exhibited characteristic temperature of as high as 125 K. Relaxation-oscillation frequency reduced by only 13% between 25/spl deg/C and 85/spl deg/C.