Dissipative transport in monolayer MoS2: role of remote coulomb scattering

In this work, we calculate the scattering rates in monolayer MoS
₂
due to various a) intrinsic phonon, b) remote phonon, and c) remote Coulomb processes. We then study the electron transport in a monolayer MoS2 based FET device employing a particle based Monte Carlo device simulator. Our results show that the total scattering rate is strongly dominated by remote coulomb scattering, which, when compared to the ballistic regime, degrades the drain current by ~78%.