SIMS characterization of fluorinated SiO/sub 2/ films

SIMS depth profiling of two type of fluorinated SiO film before and after /spl gamma/-irradiation have been performed. Analysis of the experimental data based on previous calibration and theoretical studies allow us to reveal correlation between distribution of bounded fluorine and distribution of other native and induced defects in the oxide film. Comparison of SIMS data with the result of computer simulation of /spl gamma/-irradiation induced processes in SiO/sub 2/:F shows that florine may present in SiO/sub 2/ both in "interstitial" form and may be included in such structural defects as /spl equiv/Si-F...-Si/spl equiv/, /spl equiv/Si-F...O-Si/spl equiv/, /spl equiv/Si-F...H-Si/spl equiv/. Hypothesis about high mobility of fluorine itself, is not supported by calculations. On the contrary, the high mobility of hydrogen is very important in all studied processes. In particular, /spl gamma/-irradiation leads to transfer of hydrogen from SiH complexes to SiOH ones.