Resistivity anisotropy and surface morphology in ordered In/sub x/Ga/sub 1-x/P grown at 640/spl deg/C

We have studied the resistivity anisotropy of ordered In/sub x/Ga/sub 1-x/P epitaxial layers grown at 640/spl deg/C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains.