A High Performance Polycrystalline Silicon Thin Film Transistor Using A Metal Induced Crystallization With A Ni Solution

Recently, polycrystalline silicon (poly-Si) has attracted much attention because of its wide range of applicability in electronics, such as thin film transistor (TFT), solar cell and image sensor, etc. Metal induced crystallization (MIC) is well known technology. When certain metals are on a-Si, the crystallization temperature of a-Si is dramatically lowered than conventional solid phase crystallization (SPC) temperature of a-Si 1). In the previous report2), the Nisi2 precipitate acts as a nucleation site and a- Si can be crystallized by migration of Nisi2 to a-Si at lower temperature than 500°C