Fabrication Of Nanometer Scale Structure Using Thin Film Stress

For many applications ultrafine structures have been fabricated by optical lithography, dry etching, AFM machining tool and electron beam lithography. However these methods need high cost and complicated process for large scale process. In the past we have reported on nanometer scale formation with 20 nm gap based on polysilicon layer(1). Now we will present a simple nanometer scale formation technique with silicon layer and will elucidate the formation mechanism.