Illumination Condition And Mask Bias For 0.18/spl mu/m Pattern With KrF Lithography

KrF excimer laser lithography will be used to manufacture 0.18μm design-rule devices, because ArF lithography infrastructure will not be in time for 1999, when SIA roadmap mentions that first 0.18pm products are shipped. Therefore it is necessary to use resolution enhancement technology(RET) together. In this paper the optimization of illumination condition and mask bias with half-tone mask(HTM) and off-axis illumination(OAI), as a result in the line width control and the process margin of both isolated and dense 0.18pm resist pattern, is reported .