Application Of New Empirical Model To The Electron Beam Lithography Process With Chemically Amplified Resists

Recently, electron beam lithography has been applied to 0.1 μm level in the fabrication of semiconductor devices. With this exposure technique, chemically amplified resist (CAR) has been widely utilized because of their high resolution and high sensitivity. In this article, we study on simulation models and characteristics of highly sensitive CAR, which is used in fabrication of deep sub-micron pattern delineation. Especially, we propose a general analytic model for the chemical behavior of positive tone resists with typical deprotection chemistries and negative tone resists with three components resist system.