Capacitance-voltage(C-V) characteristics of InGaAs/InAs/InGaAs quantum well MOSFET

In this work, the Capacitance-Voltage (C-V) characteristics of a In
_x
Ga
_1-x
As/InAs/In
_x
Ga
_1-x
As Quantum-Well (QW) MOSFET is investigated. 1D coupled Schrodinger-Poisson equations are solved self consistently by Finite Element Method (FEM) using COMSOL coupled with MATLAB to extract the charge density profile and Capacitance-Voltage profile. Effects of strain in the In
_x
Ga
_1-x
As/InAs/In
_x
Ga
_1-x
As Quantum-Well channel are also investigated. At the same time, effects of various device and process parameters like dielectric material, channel thickness and doping density on the C-V characteristics are also explored. The extracted C-V profile is also compared with the results obtained using SILVACO ATLAS.