GaN HEMT compact model for circuit simulation

A surface potential based scalable compact model for GaN high electron-mobility transistors (HEMTs) is presented in this work. Based on the unified regional surface potential approach (URSP) which considers subthreshold, moderate- and strong-inversion regions, we have modeled the variation of Fermi level (E
_f
) with respect to gate voltage (V
_g
). GaN buffer doping has been considered for obtaining the subthreshold regional solution using classical charge-voltage equation. The moderate- and strong-inversion models are derived from the coupled Poisson-Schrodinger solutions. Model scalability is presented by incorporating short channel effects (SCEs) and is validated with TCAD as well as measurement data with good match.