Modeling and analysis of VIA effect to LD-MOSFET RF amplifier performance

Modeling of VIA as additional extrinsic elements to LD MOSFET model utilized as a pre-amplifier of a 45dBm LTE front-end has been simulated and characterized in 1.8GHz LTE band. The RF gain performance degradation of the LD-MOSFET pre-amplifier has been verified through the simulation using modified array of shunt inductance network and verified experimentally by S-parameter measurement on some VIA structures with various dimension and PCB manufacturing arrangement. The Via effect to RF S-parameter and gain performance of the 1.8GHz pre-amplifier and over-all front-end has been fitted and analyzed. RF PCB manufacturing process aiming VIA manufacturing quality has been endorsed as a result of RF gain performance verification.