An 8-bit-resolution, 360-/spl mu/s write time nonvolatile analog memory based on differentially balanced constant-tunneling-current scheme (DBCS)

This paper describes a fast and accurate nonvolatile analog memory (NVAM) and its programming scheme. Both constant programming rate and single-pulse programmability have been achieved, which drastically enhance programming speed and accuracy. A prototype chip containing 8/spl times/128 NVAM cells (cell size of 9/spl times/13.6 /spl mu/m/sup 2/) has been fabricated using 0.8-/spl mu/m CMOS. Each cell is measured to store more than eight bit levels within 360 /spl mu/s.