Multiplexed antenna monitoring test structure [plasma charging damage]

A new test structure for measuring charging damage in CMOS transistors has been proposed, fabricated and tested successfully. With this structure, the threshold voltage shift and gate leakage of large numbers of transistors are measured while minimizing measuring time and silicon area overhead for probing pads. The large number of transistors and the large variety of antennas make the structure suitable for detailed study of various charging effects or for monitoring charging in mass IC production.