Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance

Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.<
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