Enhanced-Boost Z-Source Inverters With Switched Z-Impedance

This paper proposes a new topology for an enhanced-boost Z-source inverter (ZSI) with combined two Z-impedance networks. By two Z-impedance networks and low shoot-through duty cycle, the proposed inverter produces high output voltage gain. In traditional ZSIs for high boosting voltage, a low modulation index is required; hence, under these conditions, the output voltage will have low quality with high total harmonic distortion. Compared with the conventional high-boost ZSI topologies, the proposed inverter uses shorter shoot-through duration and a larger modulation index to improve the output waveform quality. Comparison between the proposed topology and previously proposed schemes, in terms of inductor numbers, voltage and current stresses on elements, sizes of inductors and capacitors, efficiency, and switching device product (SDP) factors of diodes, is made, and the results verify the priority of the proposed topology. The operating principle of the proposed topology is analyzed in detail. Both simulation and experimental results verify the high performance of the proposed inverter.