Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal–Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma

In this letter, thin-film transistors (TFTs) were demonstrated with In
₂
O
₃
channel layer prepared by metal-organic chemical vapor deposition (MOCVD). Treated by O
₂
microwave plasma on the In
₂
O
₃
channel, high performance was obtained such as ultra-high field-effect mobility of 243 cm
²
/Vs, ON/OFF current ratio of 10
⁷
, and high stability under negative bias illumination stress, although no typical electrical characteristics were observed for TFTs without O
₂
microwave plasma treatment. The effects of O
₂
microwave plasma treatment were investigated by Hall effect measurements, X-ray photoelectron spectroscopy, and Kelvin probe force microscopy. The results indicated that the O
₂
microwave plasma treatment leads to the oxygen ions adsorption onto the In
₂
O
₃
surface and the consequent depletion of In
₂
O
₃
channel. The MOCVD-grown In
₂
O
₃
TFTs with ultra-high field-effect mobility are potentially applied in the next-generation system on panel.