High density pseudo spin valve magnetoresistive RAM

Magnetoresistive RAM (MRAM), based on the integration of giant magnetoresistive material and Si ICs, is a nonvolatile memory technology which has unlimited read/write endurance. In this paper, nonvolatile memory cells based on pseudo spin valve giant magnetoresistive (GMR) material are demonstrated. Comparison of spin value GMR cells and pseudo spin valve cells is discussed. Functional testing of pseudo spin valve devices is presented.