The demonstrations and discussion for static/read/write noise margin (SNM/RNM/WNM) via Nanoprobing to SRAM FA applications

Nanoprobing techniques have become standard analytical way for real-world device analysis in the modern semiconductor FA lab. The four or six probing of Static noise margin (SNM) and Read noise margin (RNM) could be useful for the SRAM FA. It can justify soft fail and marginal fail to single-bit failure. The in-depth mechanism, completed operation and valuable application are introduced in the content.