A new analytical model for the two-terminal MOS capacitor on SOI substrate

An analytical model for the two-terminal metal-oxide-semiconductor-oxide-semiconductor (MOSOS) structure, which takes into account the width of the accumulation layer in the SOI film and the space-charge region in the underlying Si substrate, is presented. The results of the model are compared with results one-dimensional (1-D) numerical simulations for a uniformly doped Si film and substrate, showing considerable improvement in accuracy compared to traditional models.<
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