Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In–Ga–Zn–O as Electrode

We report a highly transparent bipolar resistive random access memory device fabricated by radio frequency magnetron sputtering based on Zr
_0.5
Hf
_0.5
O
₂
films with an amorphous semiconducting In-Ga-Zn-O films as electrode. The fabricated device gets a high average transmittance of 87.1% in the visible region. We examine the conduction mechanism and calculated the Schottky barrier height at room temperature according to the I-V characteristics. The relaxation behavior of the resistance transients indicates that the oxygen vacancies in the films play an important role in the resistive switching (RS) behaviors. In addition, we demonstrated the schematic energy band diagram to illustrate the RS mechanism.