Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms

We review previous research on ion implantation in Al/sub x/Ga/sub 1-x/As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.