Wide-band transimpedance amplifiers using AlGaAs/In/sub x/Ga/sub 1-x/As pseudomorphic 2-DEG FET's

Monolithic wide-band amplifiers have been demonstrated using AlGaAs/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic two-dimensional electron-gas field-effect transistors. The amplifiers have yielded an 18.0 GHz bandwidth and a 41.8 dB/spl Omega/ transimpedance gain with a feedback resistance of 100 /spl Omega/. In addition, the dependence of In mole fraction for an In/sub x/Ga/sub 1-x/As channel layer on device and amplifier performance has been also investigated. The g/sub m/ and the f/sub T/ in a device, along with the bandwidth, the gain, and the noise performance in an amplifier, have improved as the In mole fraction is varied from 0 to 0.25.