A 40-Gbit/s superdynamic decision IC fabricated with 0.12-/spl mu/m GaAs MESFET's

This paper describes a 4O-Gbit/s decision integrated circuit (IC) fabricated with 0.12-/spl mu/m gate length GaAs metal-semiconductor field-effect transistors (MESFET's). A superdynamic flip-flop circuit and a wide-band amplifier were applied in order to attain 40-Gbit/s operation. A conventional static decision IC was also fabricated for comparison. The dynamic decision IC operated up to 40 Gbit/s, which is twice as fast as the conventional static decision IC. Error-free 40-Gbit/s operation is the fastest among GaAs MESFET decision IC's.