Fast march tests for defects in resistive memory

Resistive Memory is a promising candidate to several applications. However, is prone to high defects due to the nanoscale fabrication uncertainties. Test time of traditional testing techniques is dominated by writes which are slower than reads. Fast March tests for defects in resistive memory are proposed in this paper. Test application time is reduced by approximately 96% when compared to existing methods. An appropriate DfT scheme to implement the new test approach is also proposed.