Electron trapping dominance in strained germanium quantum well planar and FinFET devices with NBTI

We perform a comparative study of Negative Bias Temperature Instability (NBTI) reliability on compressively strained Germanium (s-Ge) Quantum Well (QW) Planar and FinFET p-type devices. We see electron trapping from the gate electrode in all these devices with applied negative stress. FinFETs show less ΔV_T than Planar but with 1.8 times higher stress time exponent (n) and slower recovery rate than Planar. Also, Δg_m/g_m0 of FinFETs improves with increasing stress.