Performance analysis of the three transistor voltage source inverter using different PWM techniques

A new three phase three transistor voltage source inverter has recently appeared in the literature which has attractive features compared to the conventional voltage source inverter topologies. In particular, it requires a less number of costly switching devices, such as high performance transistors. This inexpensive design is considered to be advantageous in medium to high power application requiring traditional silicon based power electronic transistors or with newly-evolving yet expensive Silicon Carbide or Gallium Nitride based power semiconductor devices. This paper investigates the realization of the inverter circuit using several different PWM techniques. Theoretical analyses and simulation results are provided to verify the performance and feasibility of the proposed concept.