Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application

In this paper, we investigated the bipolar conduction mechanism in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide channel. The optimized p-type thin-oxide TFTs showed an on/off ratio of
${>}{\hbox{10}}^{4}$
, a threshold voltage of
$-$
1.05 V, and a field-effect mobility of
${\hbox{2.14}}\ {\hbox{cm}}^{2}{\cdot}{\hbox{V}}^{-1}{\cdot}{\hbox{s}}^{-1}$
. By increasing the exposure time of oxygen plasma, excess oxygen was incorporated to thin-oxide channel and converted thin monoxide to oxygen-rich n-type thin dioxide, which in turn led to n-type operation. It indicated that oxygen plasma was the critical factor to determine oxygen concentration, oxygen vacancies, metal ions and channel polarity. This proposed oxygen-content tuning through plasma treatment approach shows great promise in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.