Ni(Ge1−x−ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07

A single-crystalline Ge
_0.86
Si
_0.07
Sn
_0.07
alloy was grown on double Ge
_1-x
Sn
_x
and Ge buffers on Si (100) using magnetron sputtering. The temperature-dependent contact resistivity (ρ
_c
) of Ni/p-type Ge
_0.86
Si
_0.07
Sn
_0.07
structure was investigated in detail. Good ohmic contacts with ρ
_c
of ~1.96 × 10
^-6
Ω · cm
^-2
have been demonstrated on p-type Ge
_0.86
Si
_0.07
Sn
_0.07
after annealing at 350 °C. The low contact resistivity is attributed to the formation of Ni(Ge
_1-x-y
Si
_x
Sn
_y
) complex, and the hole Schottky barrier height of Ni(Ge
_1-x-y
Si
_x
Sn
_y
)/p-type Ge
_0.86
Si
_0.07
Sn
_0.07
is measured.