Strain-sensing element based on layered sulfide Mo0.95Re0.05S2

The work presents a study of piezoresistive effect of thin films of rhenium-doped molybdenum disulfide of composition Mo
_0.95
Re
_0.05
S
₂
possessing layered structure of 2H-MoS
₂
type. The compound was synthesized by high temperature ampoule method using stoichiometric mixture of elements. The thin films were formed by spraying colloidal dispersion produced by liquid exfoliation of solid phase in mixed solvent EtOH/H
₂
O. The phase Mo
_0.95
Re
_0.05
S
₂
is semiconductor with effective activation energy of about 150 meV estimated from temperature dependences of resistance of the films. The dependence of resistance on deformation is presented. It has almost linear type and good reproducibility during a sinusoidal alternating load of 0.12% deformation amplitude. The strain gauge factor of 12 and 24 was obtained depending on preparation details from room temperature measurements using a beam of uniform strength (in bending).