Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics

A stress engineered nano-channel (NC) In
_0.17
Al
_0.83
N/GaN T-gate Fin-High-Electron-Mobility Transistor (Fin-HEMT) exhibited a very high I
_Dmax
of >3900 mA/mm, a highest g
_m
of >1410 mS/mm and V
_th
of -3.31 V at V
_D
= 6V with good pinch-off characteristics. This dramatic increase of I
_D
, g
_m
and extracted electron velocity (ν
_e
) of 6.0×10
⁷
cm/s in the In
_0.17
Al
_0.83
N/GaN NC Fin-HEMT is due to the tensile stress by T-shape gate and SiN passivation. The Fin-HEMTs were also exhibited impressive device performance (g
_m
=646 mS/mm, I
_on
=1.03 A/mm, I
_OFF
=1.13 μA/mm, I
_ON
/I
_OFF
~10
⁶
, SS=82 mV/dec) even at V
_D
of 0.5 V.