Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates

In
_0.53
Ga
_0.47
As Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control In
_0.53
Ga
_0.47
As Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-to-valley ratio for the III–V on Si sample and the control that perform similarly below
$8.6 \times 10^{-10}$
cm
$^{2}$
. The existence of a critical device area suggests the potential to utilize III–V on Si for other deeply scaled tunnel devices.