All silicon rich silicon carbide based solar cell

All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH
₄
]/[CH
₄
+SiH
₄
] fluence ratio of 50%, the i-Si
_x
C
_1-x
layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×10
⁵
cm
^-1
. The open-circuit voltage and short-circuit current of the Si-rich Si
_0.67
C
_0.33
/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm
²
with the conversion efficiency and filling factor to 5.51% and 27%, respectively.