Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study

Full-band ballistic quantum transport calculations were used to study the screening effects in ultrashort-channel few-layer MoS
₂
transistors. A large density of states resulted in small screening lengths while inhibiting direct source-to-drain tunneling. Short-channel effects were observed even for the structurally confined 2-D transistors resulting in degraded electrostatic control. Electron confinement effects were also observed in the OFF-state in multilayered devices.