High-performance W-band LNA and SPDT switch in 0.13µm SiGe HBT technology

In this work, the authors present high performance W-band building blocks in an 0.13µm SiGe HBT technology. A single-pole double-throw switch is presented utilizing reverse-saturated HBTs, with a measured insertion loss of 2 dB and an isolation of 27 dB at 94 GHz, demonstrating state-of-the-art performance. The LNA provides a gain of 20 dB and a noise figure of 4.2 dB. An integrated version is presented as well towards a radiometer frontend and transmit/receive frontend.